| PART |
Description |
Maker |
| H27UAG8T2A |
16 Gbit (2048 M x 8 bit) NAND Flash
|
Hynix
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| TC58NVG6T2FTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| H27U8G8T2B |
8 Gbit (1024 M x 8 bit) NAND Flash
|
Hynix
|
| TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| S34ML16G2 |
16-Gbit, 4-Bit ECC, ×8 I/O, 3 V VCC NAND Flash for Embedded
|
Cypress Semiconductor
|
| NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位，2112 Byte/1056字的页面.8V/3VNAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| TH58NVG2S3BTG00 |
4-Gbit CMOS NAND EPROM
|
Toshiba
|
| NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V
http://
|
| AM2716B AM2716B-100DC AM2716B-100DE AM2716B-100DI |
2048 x 8 Bit / 4096 x 8 Bit EPROM
(AM2732B) 2048 x 8 Bit EPROM
2048 X 8 - BIT / 4096 X 8 - BIT EPROM
|
Advanced Micro Devices
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
